Winantyo, Rangga and Mohan, V. M. and Rajapakse, R. M. G. and Murakami, Kenji (2014) Suppressing the Recombination Rate on DSSC by Forming Blocking Layer. IEICE Technical Report, 113 (449). pp. 43-46. ISSN 2432-6380
Full text not available from this repository.Abstract
One of the disadvantages of ZnO in the application for DSSCs is a high recombination rate. In general, the suppression of electron recombination leads to an increase in the short circuit current. The same current in the present study suggests that the injected electrons from dye into ZnO may recombine with the electrolyte through the ZnO seed layer. We are trying to form a dense ZnO or TiO_2 layer at the bottom of nanorods. The energy conversion efficiency could be improved by inserting a layer between the ZnO and FTO, which will substantially suppress the recombination rate
| Item Type: | Article |
|---|---|
| Subjects: | 500 Science and Mathematic > 500 Science > 507 Education, Research, Related Topics |
| Divisions: | Faculty of Engineering & Informatics > Electrical Engineering |
| Depositing User: | Administrator UMN Library |
| Date Deposited: | 08 Dec 2021 10:49 |
| Last Modified: | 08 Dec 2021 10:49 |
| URI: | https://kc.umn.ac.id/id/eprint/19413 |
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