Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy

Ding, Y. and Park, K-B and Pelz, J. P. and Palle, K. C. and Mikhov, M. K. and Skromme, B. J. and Meidia, Hira and Mahajan, Subhash D. (2004) Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy. Journal of Vacuum Science & Technology A, 22 (4). ISSN 1520-8559

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High-temperature-processing-induced “double-stacking fault” cubic inclusions in 4H-SiC were studied with ballistic electron emission microscopy (BEEM). Large BEEM current and a ∼0.53 eV local reduction in the Schottky barrier height (SBH) were observed where the inclusions intersect a Pt interface, confirming the quantum-well nature of the inclusions and providing nanometer scale information about local electronic behavior. Measured spatial variations in the BEEM current are related to the inclusion orientation and local surface step structure. An observation of an anomalously low SBH is discussed, suggesting the existence of a triple- or quadruple-stacking fault inclusion.

Item Type: Article
Subjects: 500 Science and Mathematic > 530 Physics
Divisions: Fakultas Teknik Informatika > Program Studi Teknik Komputer
Depositing User: mr admin umn
Date Deposited: 06 Dec 2021 15:46
Last Modified: 06 Dec 2021 15:46

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