Fang, X L and Wang, Y Q and Mahajan, S and Meidia, Hira (2004) Reduction of threading dislocations in GaN layers using in situ deposited silicon nitride masks on AlN and GaN nucleation layers. Applied Physics Letters, 84 (4). ISSN 1077-3118
Full text not available from this repository.Abstract
We have examined the influence of thin layers of silicon nitride, deposited in situ on AlN and GaN nucleation layers (NLs), on the density of threading dislocations (TDs) in GaN overgrowths. Results indicate that TD density is reduced to 2–4×108 cm−2. In GaN/silicon nitride/AlN–NL/sapphire composites, alternating regions of low and high TD density coexist in the overgrowth, and microstructural features characteristic of epitaxial lateral overgrowth techniques are seen. On the other hand, such features are absent in GaN/silicon nitride/GaN–NL/sapphire composites, and TDs are uniformly distributed.
| Item Type: | Article |
|---|---|
| Subjects: | 500 Science and Mathematic > 500 Science > 507 Education, Research, Related Topics 500 Science and Mathematic > 540 Chemistry > 540 Chemistry and Allied Sciences |
| Divisions: | Faculty of Engineering & Informatics > Computer Engineering |
| Depositing User: | Administrator UMN Library |
| Date Deposited: | 06 Dec 2021 14:06 |
| Last Modified: | 06 Dec 2021 14:06 |
| URI: | https://kc.umn.ac.id/id/eprint/19361 |
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