Ding, Y. and Park, Han Bi and Pelz, J. P. and Palle, K. C. and Mikhov, M. K. and Skromme, B. J. and Meidia, Hira and Mahajan, S (2004) Quantum well state of self-forming 3C−SiC inclusions in 4H SiC determined by ballistic electron emission microscopy. Physical Review B, 69 (4). ISSN 2469-9969
Full text not available from this repository.Abstract
High-temperature-processing-induced double-stacking-fault 3C−SiC inclusions in 4H SiC were studied with ballistic electron emission microscopy in ultrahigh vacuum. Distinctive quantum well structures corresponding to individual inclusions were found and the quantum well two-dimensional conduction band minimum was determined to be approximately 0.53±0.06eV below the conduction band minimum of bulk 4H SiC. Macroscopic diode I−V measurements indicate no significant evidence of metal/semiconductor interface state variation across the inclusions.
| Item Type: | Article |
|---|---|
| Subjects: | 500 Science and Mathematic > 500 Science > 507 Education, Research, Related Topics 500 Science and Mathematic > 530 Physics > 530 Physics |
| Divisions: | Faculty of Engineering & Informatics > Computer Engineering |
| Depositing User: | Administrator UMN Library |
| Date Deposited: | 06 Dec 2021 14:36 |
| Last Modified: | 27 Jan 2022 03:28 |
| URI: | https://kc.umn.ac.id/id/eprint/19363 |
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