Hayes, Joel R. and Kim, Dae-woo and Meidia, Hira and Mahajan, Subhash D. (2003) Thermal stability of TaN Schottky contacts on n-GaN. Acta Materialia, 51 (3). pp. 653-663. ISSN 1359-6454
Full text not available from this repository.Abstract
The thermal stability and electrical characteristics of tantalum-nitrogen alloy Schottky contacts on n-GaN were investigated. Non-stoichiometric δ-phase (40 atomic percent nitrogen) tantalum nitride contacts exhibited good electrical properties up to an annealing temperature of 600°C. However, they degrade rapidly above this temperature due to outward diffusion of Ga and presumably nitrogen into the δ-phase tantalum nitride. It is surmised that excess Ta reacts with N at the GaN surface, freeing Ga which then diffuses into the TaN layer. Stoichiometric TaN Schottky contacts were stable at temperatures as high as 800°C and had far superior electrical performance. This stems from the thermodynamic stability of the stoichiometric TaN/GaN interface. δ-phase TaN had I-V and C-V barrier heights of 0.55 eV and 0.8 eV respectively. On the other hand, TaN had an I-V barrier height near 0.7 eV and a C-V barrier height near 1.2 eV. The ideality factors for both δ-phase TaN and TaN were above 1.8 at all annealing temperatures, suggesting tunneling contributes significantly to current transport.
| Item Type: | Article |
|---|---|
| Keywords: | GaN; Schottky contact; TaN; thermal stability |
| Subjects: | 500 Science and Mathematic > 500 Science > 507 Education, Research, Related Topics 500 Science and Mathematic > 530 Physics > 530 Physics |
| Divisions: | Faculty of Engineering & Informatics > Computer Engineering |
| Depositing User: | Administrator UMN Library |
| Date Deposited: | 06 Dec 2021 15:03 |
| Last Modified: | 06 Dec 2021 15:03 |
| URI: | https://kc.umn.ac.id/id/eprint/19365 |
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