Thomas, P. J. S. and Hosea, T. J. C. and Lancefield, D. and Meidia, Hira (2000) Monitoring thickness changes in GaAs/AlAs partial VCSEL Bragg reflector stacks using optical spectroscopic, x-ray and electron microscopic methods. Semiconductor Science and Technology, 16 (2). pp. 107-117. ISSN 1361-6641
Full text not available from this repository.Abstract
Vertical-cavity surface-emitting lasers (VCSELs) are complex multi-layer structures whose operating characteristics are highly sensitive to variations in layer thickness and composition. We have made non-destructive measurements of the thickness of GaAs/AlAs layers in three wafer-sized VCSEL substructures, consisting of partial distributed Bragg reflectors, grown by metal-organic vapour-phase epitaxy. A range of techniques were investigated and compared, including reflectance, photo-modulated reflectance, spectroscopic ellipsometry and high-resolution x-ray diffraction. The results obtained from each technique for the layer thicknesses are equal to each other to within ±~1%. The precision of the optical techniques is as good as, and sometimes better than, direct measurements made using destructive cross-sectional transmission electron microscopy.
| Item Type: | Article |
|---|---|
| Subjects: | 500 Science and Mathematic > 530 Physics |
| Divisions: | Faculty of Engineering & Informatics > Computer Engineering |
| Depositing User: | Administrator UMN Library |
| Date Deposited: | 06 Dec 2021 15:26 |
| Last Modified: | 06 Dec 2021 15:26 |
| URI: | https://kc.umn.ac.id/id/eprint/19368 |
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